Fabrication of a vertical fin field effect transistor with reduced dimensional variations
AssigneeInternational Business Machines Corporation
InventorKangguo Cheng
Life of this patent
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Abstract
A method of forming a fin field effect transistor (finFET) having fin(s) with reduced dimensional variations, including forming a dummy fin trench within a perimeter of a fin pattern region on a substrate, forming a dummy fin fill in the dummy fin trench, forming a plurality of vertical fins within the perimeter of the fin pattern region, including border fins at the perimeter of the fin pattern region and interior fins located within the perimeter and inside the bounds of the border fins, wherein the border fins are formed from the dummy fin fill, and removing the border fins, wherein the border fins are dummy fins and the interior fins are active vertical fins.
Claims20
A fin field effect transistor (finFET) having fin(s) with reduced dimensional variations, comprising:
- a plurality of vertical fins within a perimeter of a fin pattern region on a substrate;
- a step formed in the substrate surrounding the plurality of vertical fins;
- and
- a dielectric layer on the step and at least a portion of the plurality of vertical fins.
A fin field effect transistor (finFET) having fin(s) with reduced dimensional variations, comprising:
- a plurality of vertical fins within a perimeter of a fin pattern region on a substrate;
- a step formed in the substrate around the plurality of vertical fins;
- a ledge adjoining at least one of the plurality of vertical fins, where the ledge is between the step and the at least one of the plurality of vertical fins;
- and
- a dielectric layer on the step, the ledge, and at least a portion of the plurality of vertical fins.
A fin field effect transistor (finFET) having fin(s) with reduced dimensional variations, comprising:
- one or more vertical fins on a raised region of a substrate, wherein the raised region includes a step formed in the substrate around the one or more vertical fins and a ledge adjacent to at least one of the one or more vertical fins, where the ledge is between the step and the at least one of the one or more of vertical fins;
- and
- a doped region in the raised region of the substrate, wherein the raised region forms a bottom source/drain below the one or more vertical fins.
Dependencies are inferred from the claim text.