US 2018/0005897 A1 · SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME

Abstract

In a method of manufacturing a semiconductor device, an isolation region is formed in a substrate, such that the isolation region surrounds an active region of the substrate in plan view. A first dielectric layer is formed over the active region. A mask layer is formed on a gate region of the first dielectric layer. The gate region includes a region where a gate electrode is to be formed. The mask layer covers the gate region, but does not entirely cover the first dielectric layer. The first dielectric layer not covered by the mask layer is removed such that a source-drain region of the active region is exposed. After that, the mask layer is removed. A second dielectric layer is formed so that a gate dielectric layer is formed. The gate electrode is formed over the gate dielectric layer.

Claims21

Dependent claims

A method of manufacturing a semiconductor device, the method comprising:

forming an isolation region in a substrate such that the isolation region surrounds an active region of the substrate in plan view, the isolation region including an insulating material;
forming a first dielectric layer over the active region;
forming a mask layer on a gate region of the first dielectric layer, the gate region including a region where a gate electrode is to be formed, the mask layer covering the gate region, but does not entirely cover the first dielectric layer;
removing the first dielectric layer not covered by the mask layer such that source-drain regions of the active region are exposed;
after removing the first dielectric layer not covered by the mask layer, removing the mask layer;
forming a second dielectric layer so that a gate dielectric layer is formed;
and
forming the gate electrode over the gate dielectric layer.

5 more elements

A method of manufacturing a semiconductor device including a first field effect transistor (FET) and a second FET, the method comprising:

forming an isolation region in a substrate such that the isolation region surrounds a first active region of the substrate for the first FET and a second active region of the substrate for the second FET in plan view, the isolation region including an insulating material;
forming a first silicon oxide layer over the first and second active regions by thermal oxidation;
forming a mask layer over a gate region of the first silicon oxide layer formed over the first active region, the gate region including a region where a first gate electrode of the first FET is to be formed, the mask layer covering the gate region, but does not entirely cover the first silicon oxide layer formed over the first active region, wherein no mask layer is formed over the second active region;
removing the first silicon oxide layer not covered by the mask layer in the first active region, and the first silicon oxide layer in the second active region;
removing the mask layer;
after the mask layer is removed, forming a second silicon oxide layer by thermal oxidation so that a first gate dielectric layer for the first FET and a second gate dielectric layer for the second FET are formed;
and
forming the first gate electrode over the first gate dielectric layer for the first FET and a second gate electrode over the second gate dielectric layer for the second FET, wherein:
the first gate dielectric layer includes a first region and a second region having a thickness greater than the first region, and
the second gate dielectric layer has a same thickness as the first region of the first gate dielectric layer.

7 more elements

Dependencies are inferred from the claim text.

Semiconductor device and a method for fabricating the same

Life of this patent

Semiconductor device and a method for fabricating the same

Life of this patent

Abstract

Claims21