Methods for forming mask layers using a flowable carbon-containing silicon dioxide material

Abstract

One method disclosed herein includes, among other things, forming a process layer on a substrate. A patterned mask layer is formed above the process layer. The patterned mask layer includes first openings exposing portions of the process layer. A carbon-containing silicon dioxide layer is formed above the patterned mask layer and in the first openings. The carbon-containing silicon dioxide layer is planarized to remove portions extending outside the first openings and generate a plurality of mask elements from remaining portions of the carbon-containing silicon dioxide layer. The patterned mask layer is removed. The process layer is etched using the mask elements as an etch mask.

Dependencies are inferred from the claim text.