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US 2018/0005892 A1Published application
Strained and unstrained semiconductor device features formed on the same substrate
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Juntao Li, Peng Xu
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Abstract
Embodiments of the invention are directed to a configuration of semiconductor devices having a substrate and a first feature formed on the substrate, wherein the first feature includes a first preserve region having compressive strain that extends throughout the first preserve region, and wherein the first feature further includes a cut region comprising a dielectric.
Claims20
A configuration of semiconductor devices comprising:
- a substrate;
- and
- a first feature formed on the substrate;
- wherein the first feature comprises a first preserve region having compressive strain that extends throughout the first preserve region;
- wherein the first feature further comprises a first cut region comprising a dielectric.
2 more elements
A configuration of semiconductor devices comprising:
- a substrate;
- and
- a first feature formed on the substrate;
- wherein the first feature comprises a first preserve region having compressive strain that extends throughout the first preserve region;
- wherein the first feature comprises a first cut region comprising a dielectric;
- wherein the compressive strain extending throughout the first preserve region comprises a predetermined percentage of compressive strain.
3 more elements
Dependencies are inferred from the claim text.