Through-silicon via with injection molded fill
AssigneeInternational Business Machines Corporation
InventorsDAVID W. ABRAHAM, JOHN M. COTTE, CHRISTOPHER V. JAHNES
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Abstract
Embodiments are directed to a method of forming a conductive via. The method includes forming an opening in a substrate and forming a conductive material along sidewall regions of the opening, wherein the conductive material occupies a first portion of an area within the opening. The method further includes forming a conductive fill in a second portion of the area within the opening, wherein at least one surface of the conductive material and at least one surface of the conductive fill are substantially coplanar with a front surface of the substrate.
Claims20
A method of forming a conductive via, the method comprising:
- forming an opening in a substrate;
- forming a conductive material along sidewall regions of the opening, wherein the conductive material occupies a first portion of an area within the opening;
- forming a conductive fill in a second portion of the area within the opening;
- and
- forming a wettable material between the conductive material and the conductive fill in a third portion of the area within the opening;
- wherein the wettable material comprises a continuous wettable surface that surrounds portions of the conductive fill;
- wherein at least one top surface of the conductive material, at least one top surface of the conductive fill, and at least one top surface of the wettable material are substantially coplanar with a front surface of the substrate.
A method of forming a conductive via, the method comprising:
- forming an opening in a substrate;
- forming a layer of superconducting material along sidewall regions of the opening, wherein the layer of superconducting material occupies a first portion of an area within the opening;
- filling a second portion of the area within the opening with a conductive material;
- and
- forming a wettable material between the layer of superconducting material and the conductive fill in a third portion of the area within the opening;
- wherein the wettable material comprises a continuous wettable surface that surrounds portions of the conductive material;
- wherein the opening extends through the substrate from a front surface of the substrate to a back surface of the substrate;
- wherein at least one top surface of the layer of superconducting material, at least one top surface of the conductive fill, and at least one top surface of the wettable material are substantially coplanar with the front surface of the substrate;
- wherein at least one second surface of the layer of superconducting material is substantially coplanar with the back surface of the substrate;
- wherein an electrical conducting path is provided from the at least one surface of the layer of superconducting material to the at least one second surface of the layer of superconducting material.
A conductive via comprising:
- an opening in a substrate;
- a conductive material along sidewall regions of the opening, wherein the conductive material occupies a first portion of an area within the opening;
- and
- a conductive fill in a second portion of the area within the opening;
- and
- a wettable material between the conductive material and the conductive fill in a third portion of the area within the opening;
- wherein the wettable material comprises a continuous wettable surface that surrounds portions of the conductive fill;
- wherein at least one top surface of the conductive material, at least one top surface of the conductive fill, and at least one top surface of the wettable material are substantially coplanar with a front surface of the substrate.
Dependencies are inferred from the claim text.