Aggressive tip-to-tip scaling using subtractive integration
AssigneeInternational Business Machines Corporation
InventorsVeeraraghavan S. Basker, Wilfried E.-A. Haensch
Life of this patent
Estimating the term…
Abstract
An interconnect structure including a semiconductor structure on a semiconductor substrate, the semiconductor structure having a gate structure, shallow trench isolation and a source and a drain; a trench adjacent to the gate structure; a metal line adjacent to the gate structure and filling the trench, the metal line contacts one of the source and the drain; a gap in the metal line so as to create segments of the metal line; and a dielectric material filling the gap such that ends of the metal line abut the dielectric material wherein the ends of the metal line have a flat surface.
Claims18
An interconnect structure comprising:
- a semiconductor structure on a semiconductor substrate, the semiconductor structure having a gate structure, shallow trench isolation and a source and a drain;
- a trench adjacent to the gate structure;
- a metal line adjacent to the gate structure and filling the trench, the metal line contacts one of the source and the drain;
- a gap in the metal line so as to create segments of the metal line;
- and
- a dielectric material filling the gap such that ends of the metal line abut the dielectric material wherein the ends of the metal line have a flat surface.
An interconnect structure comprising:
- a semiconductor structure on a semiconductor substrate, the semiconductor structure having a plurality of gate structures, shallow trench isolation separating the plurality of gate structures and each gate structure having a source and a drain;
- a trench adjacent to each of the plurality of gate structures;
- a metal line adjacent to each of the plurality of gate structures and filling the trench, the metal line contacts one of the source and the drain of the plurality of gate structures;
- a gap in each metal line so as to create segments of the each metal line;
- and
- a dielectric material filling the gap in each metal line such that ends of the each metal line abut the dielectric material wherein the ends of the each metal line have a flat surface.
Dependencies are inferred from the claim text.