Methods of enhancing polymer adhesion to copper

A method of processing a substrate, comprising:

• immersing a substrate in a first bath, wherein the substrate comprises a barrier layer, a conductive seed layer atop the barrier layer, and a patterned photoresist layer atop the conductive seed layer defining an opening formed to a top surface of the conductive seed layer, and wherein the first bath comprises a solution of at least one acid, a copper-containing compound, and at least one additive;
• providing a first electric current between the conductive seed layer and a first anode disposed in electrical contact with the first bath to deposit a conductive material within the opening;
• removing the substrate from the first bath;
• stripping the patterned photoresist layer prior to immersing the substrate in a second bath to expose a portion of the conductive seed layer formed atop a field region of the barrier layer and to expose sidewalls of the conductive material;
• immersing the substrate in the second bath, wherein the second bath comprises a solution of at least one acid and a copper-containing compound without any additives;
• providing a second electric current that is a reverse of the first electric current between the conductive seed layer plus the conductive material and a second anode disposed in electrical contact with the second bath;
• etching the conductive seed layer from atop a field region of the barrier layer after etching the patterned photoresist layer and after providing the second electric current;
• and
• etching the barrier layer from atop a field region of the substrate.

A method of processing a substrate, comprising:

• immersing a substrate in a first bath comprising copper sulfate (CuSO4), sulfuric acid (H2SO4), hydrogen chloride (HCl), and one or more additives, wherein the substrate comprises a barrier layer, a conductive seed layer atop the barrier layer, and a patterned photoresist layer atop the conductive seed layer defining an opening formed to a top surface of the conductive seed layer;
• providing a first electric current between the conductive seed layer and a first anode disposed in electrical contact with the first bath to deposit a conductive material within the opening;
• stripping the patterned photoresist layer prior to immersing the substrate in a second bath to expose a portion of the conductive seed layer formed atop a field region of the barrier layer and to expose sidewalls of the conductive material;
• etching the conductive seed layer from atop a field region of the barrier layer;
• immersing the substrate in the second bath comprising copper sulfate (CuSO4), sulfuric acid (H2SO4), and hydrogen chloride (HCl) without any additives;
• providing a second electric current that is a reverse of the first electric current between the barrier layer plus the conductive material and a second anode disposed in electrical contact with the second bath;
• and
• etching the barrier layer from atop a field region of the substrate.

A method of processing a substrate, comprising:

• immersing a substrate in a first bath comprising copper sulfate (CuSO4), sulfuric acid (H2SO4), hydrogen chloride (HCl), and one or more additives, wherein the substrate comprises a barrier layer, a conductive seed layer atop the barrier layer, and a patterned photoresist layer atop the conductive seed layer defining an opening formed to a top surface of the conductive seed layer;
• providing a first electric current between the conductive seed layer and a first anode disposed in electrical contact with the first bath to deposit a conductive material within the opening;
• immersing the substrate in a second bath comprising copper sulfate (CuSO4), sulfuric acid (H2SO4), and hydrogen chloride (HCl) without any accelerators, suppressors, or levelers;
• providing a second electric current that is a reverse of the first electric current between the conductive seed layer plus the conductive material and a second anode disposed in electrical contact with the second bath;
• stripping the patterned photoresist layer after providing the second electric current to expose a portion of the conductive seed layer formed atop a field region of the barrier layer and to expose sidewalls of the conductive material;
• etching the conductive seed layer from atop a field region of the barrier layer after stripping the patterned photoresist layer;
• immersing the substrate in the second bath and providing the second electric current that is a reverse of the first electric current between the barrier layer plus the conductive material and the second anode disposed in electrical contact with the second bath after etching the conductive seed layer;
• and
• etching the barrier layer from atop a field region of the substrate.