Semiconductor interconnect structure and manufacturing method thereof
AssigneesSemiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing International (Shanghai) Corporation
InventorJiquan LIU
Life of this patent
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Abstract
A semiconductor interconnect structure and its manufacturing method are presented. The manufacturing method includes: providing a substrate structure, wherein the substrate structure comprises: a substrate; a first metal layer on the substrate; a dielectric layer on the substrate, wherein the dielectric layer covers the first metal layer, and wherein the dielectric layer has a hole extending to the first metal layer; and a hard mask layer on the dielectric layer; removing the hard mask layer on the dielectric layer; selectively depositing a second metal layer at the bottom of the hole; and depositing a third metal layer, wherein the third metal layer fills the hole. This semiconductor interconnect structure provides improved reliability over conventional structures.
Claims18
A method of manufacturing a semiconductor interconnect structure, comprising:
- providing a substrate structure, wherein the substrate structure comprises:
- a substrate;
- a first metal layer on the substrate;
- a dielectric layer on the substrate, wherein the dielectric layer covers the first metal layer, and wherein the dielectric layer has a hole extending to the first metal layer;
- and
- a hard mask layer on the dielectric layer;
- removing the hard mask layer on the dielectric layer;
- selectively depositing a second metal layer at the bottom of the hole;
- and
- depositing a third metal layer in the hole.
A semiconductor interconnect structure, comprising:
- a substrate;
- a first metal layer on the substrate;
- a dielectric layer on the substrate, wherein the dielectric layer covers the first metal layer, and wherein the dielectric layer has a hole extending to the first metal layer;
- a second metal layer on the first metal layer at the bottom of the hole;
- and
- a third metal layer on the second metal layer, wherein the third metal layer fills the hole.
Dependencies are inferred from the claim text.