Semiconductor devices, finfet devices and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChe-Cheng Chang, Chih-Han Lin, Horng-Huei Tseng
Life of this patent
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Abstract
Semiconductor devices, FinFET devices and methods of forming the same are provided. In accordance with some embodiments, a semiconductor device includes a substrate, a first gate stack, a spacer, a first dielectric layer, a shielding layer and a connector. The first gate stack is over the substrate. The spacer is disposed on and contacted to at least one sidewall of the first gate stack. The first dielectric layer is aside the spacer. The shielding layer covers a top surface of the spacer and a top surface of the first dielectric layer. The connector contacts a portion of a top surface of the first gate stack.
Claims20
A semiconductor device, comprising:
- a first gate stack over a substrate;
- a spacer, disposed on and contacted to at least one sidewall of the first gate stack;
- a first dielectric layer aside the spacer;
- a shielding layer covering a top surface of the spacer and a top surface of the first dielectric layer;
- and
- a connector contacting a first portion of a top surface of the first gate stack.
A FinFET device, comprising:
- a substrate having at least one fin;
- a first gate stack across the at least one fin;
- a first dielectric layer aside the first gate stack;
- a second dielectric layer over the first dielectric layer;
- a connector through the second dielectric layer and electrically connected to the first gate stack;
- and
- a shielding layer between the first dielectric layer and the second dielectric layer, and between the connector and the first dielectric layer, and in physical contact with the connector.
A method of forming a semiconductor device, comprising:
- providing a substrate having a first gate stack formed thereon and a first dielectric layer formed aside the first gate stack;
- forming a shielding layer on a top surface of the first gate stack and on a top surface of the first dielectric layer;
- forming a second dielectric layer over the shielding layer;
- and
- forming a connector through the second dielectric layer and the shielding layer and electrically connected to the first gate stack.
Dependencies are inferred from the claim text.