Etch Stop Layer for Semiconductor Devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSzu-Ping Tung, Jen Hung Wang, Shing-Chyang Pan
Life of this patent
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Abstract
A semiconductor device includes a substrate, a first conductive feature over a portion of the substrate, and an etch stop layer over the substrate and the first conductive feature. The etch stop layer includes a silicon-containing dielectric (SCD) layer and a metal-containing dielectric (MCD) layer over the SCD layer. The semiconductor device further includes a dielectric layer over the etch stop layer, and a second conductive feature in the dielectric layer. The second conductive feature penetrates the etch stop layer and electrically connects to the first conductive feature.
Claims21
A semiconductor device, comprising:
- a substrate;
- a first conductive feature over a portion of the substrate;
- an etch stop layer over the substrate and the first conductive feature, wherein the etch stop layer includes a silicon-containing dielectric (SCD) layer and a metal-containing dielectric (MCD) layer over the SCD layer;
- a dielectric layer over the etch stop layer;
- and
- a second conductive feature in the dielectric layer, wherein the second conductive feature penetrates the etch stop layer and electrically connects to the first conductive feature.
A semiconductor device, comprising:
- a substrate;
- a first low-k dielectric layer over the substrate;
- a first conductive feature in the first low-k dielectric layer;
- an etch stop layer over the first low-k dielectric layer, wherein the etch stop layer includes a silicon-containing dielectric (SCD) layer and a metal-containing dielectric (MCD) layer over the SCD layer, wherein the MCD layer comprises an oxide of a metal material or a nitride of the metal material;
- a second low-k dielectric layer over the etch stop layer;
- and
- a second conductive feature partially in the second low-k dielectric layer, wherein the second conductive feature penetrates the etch stop layer and electrically connects to the first conductive feature.
16-20. (canceled)
A semiconductor device, comprising:
- a substrate, a first dielectric layer over the substrate, and a first conductive feature in the first dielectric layer;
- a silicon-containing thin-film layer over the first dielectric layer;
- a metal-containing thin-film layer over the silicon-containing thin-film;
- a second dielectric layer over the metal-containing thin-film layer;
- and
- a trench in the second dielectric layer, the trench having sidewalls formed of the second dielectric layer and a bottom formed of the metal-containing thin-film layer.
The device of claim 20, further comprising:
- wherein the silicon-containing thin-film layer and the metal-containing thin-film layer both have a thickness less than about 1000 angstrom (Å).
The device of claim 20, wherein the silicon-containing thin-film layer comprises silicon and one of:
- oxygen, carbon, and nitrogen.
The device of claim 20, wherein the metal-containing thin-film layer comprises an oxide of or a nitride of a metal material that comprises aluminum, tantalum, titanium, or hafnium.
Dependencies are inferred from the claim text.