Self-aligned pattern formation for a semiconductor device
AssigneeInternational Business Machines Corporation
InventorsSean D. Burns, Lawrence A. Clevenger, Nelson M. Felix, Sivananda K. Kanakasabapathy, Christopher J. Penny, Nicole Saulnier
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Abstract
A method of forming a self-aligned pattern of vias in a semiconductor device comprises forming a first layer of mandrels, then forming a second layer of mandrels orthogonal to the first layer of mandrels. The layout of the first and second layers of mandrels defines a pattern that can be used to create vias in a semiconductor material. Other embodiments are also described.
Claims20
A method of forming vias, the method comprising:
- providing a semiconductor wafer in which front end of line (FEOL) processing has been completed;
- depositing a hard mask on an optical planarization layer (OPL);
- forming a first layer with one or more mandrels on the hard mask;
- placing a non-mandrel material between each of the one or more mandrels;
- depositing an etch stop layer over the first layer of one or more mandrels;
- forming a second layer with one or more mandrels on the etch stop layer;
- etching the non-mandrel material that is not covered by the second layer;
- and
- removing the one or more mandrels of the first layer and the one or more mandrels of the second layer down to the hard mark to form a pattern in the hard mask.
An integrated circuit comprising:
- a plurality of components formed in a front end of line process;
- one or more metal lines coupling two or more components to each other;
- and
- one or more vias arranged to couple together two metal lines;
- the vias formed by:
- providing a semiconductor wafer in which front end of line (FEOL) processing has been completed;
- depositing a hard mask on an optical planarization layer (OPL);
- forming a first layer with one or more mandrels on the hard mask;
- placing a non-mandrel material between each of the one or more mandrels;
- depositing an etch stop layer over the first layer of one or more mandrels;
- forming a second layer with one or more mandrels on the etch stop layer;
- etching the non-mandrel material that is not covered by the second layer;
- and
- removing the one or more mandrels of the first layer and the one or more mandrels of the second layer down to the hard mark to form a pattern in the hard mask;
- and
- using the pattern to form one or more vias.
A method of forming vias in a semiconductor, the method comprising:
- providing a semiconductor wafer in which front end of line (FEOL) processing has been completed;
- depositing a hard mask on an optical planarization layer (OPL);
- forming a first layer with one or more mandrels on the hard mask, wherein the mandrels in the first layer are in a first orientation;
- forming a second layer with one or more mandrels over the first layer, wherein the mandrels in the second layer are in a second orientation that is orthogonal to the first orientation;
- using a combination of the first layer and the second layer to form a pattern on the hard mask;
- and
- using the pattern on the hard mask to create one or more vias.
Dependencies are inferred from the claim text.