Preparation of silicon-germanium-on-insulator structures
AssigneeSunEdison Semiconductor Limited (UEN201334164H)
InventorsShawn George Thomas, Gang Wang
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Abstract
Donor structures having a germanium buffer layer for preparing silicon-germanium-on-insulator structures by layer transfer are disclosed. Bonded structures and methods for preparing silicon-germanium-on-insulator structures by a layer transfer method are also disclosed.
Claims27
A multi-layered semiconductor donor structure having two major, generally parallel surfaces, one of which is a front surface and the other of which is a back surface, the donor structure comprising:
- a single crystal silicon handle layer;
- a device layer comprising silicon and germanium;
- a relaxed germanium buffer layer disposed between the single crystal silicon handle layer and the device layer, the buffer layer comprising at least about 90 wt % germanium, the single crystal handle layer and relaxed buffer layer forming a handle-buffer interface.
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A method for preparing a multi-layered crystalline structure, the method comprising:
- implanting ions selected from the group consisting of hydrogen, helium and combinations thereof into a donor structure having a central axis and an implantation surface generally perpendicular to the central axis, wherein the donor structure comprises a semiconductor device layer comprising silicon and germanium, a handle layer, and a relaxed germanium buffer layer which is positioned along the central axis of the donor structure between the device surface and the handle layer, the relaxed germanium buffer layer comprising at least about 90 wt % germanium, wherein the ions are implanted into the donor structure through the implantation surface to an implantation depth sufficient to form in the implanted donor structure a damage layer which is generally perpendicular to the axis and located in the buffer layer and/or in the handle layer;
- bonding the implanted donor structure to a second structure to form a bonded structure;
- cleaving the donor structure along the damaged layer to form a multi-layered crystalline structure comprising the second structure, the device layer and residual material, the residual material comprising at least a portion of the buffer layer and optionally a portion of the handle layer;
- and,
- removing the residual material from the multi-layered crystalline structure.
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Dependencies are inferred from the claim text.