Carrier substrates for semiconductor processing
AssigneeCorning Incorporated
InventorsSumalee Likitvanichkul Fagan, Weiguo Miao, Eric James Nichols
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Abstract
A carrier substrate includes a base layer having a first surface, and having a second surface that is parallel to and opposite of the first surface. The carrier substrate further includes a glass layer bonded to the first surface of the base layer. The carrier substrate has a Young's modulus greater than or equal to 150 GPa. A carrier substrate includes a polycrystalline ceramic and has a Young's modulus greater than or equal to 150 GPa. The carrier substrate has a coefficient of thermal expansion of greater than or equal to 20×10−7/° C. to less than or equal to 120×10−7/° C. over a range from 25° C. to 500° C.
Claims29
A carrier substrate comprising:
- a base layer having a first surface, and having a second surface that is opposite of the first surface;
- and
- a glass layer bonded to the first surface of the base layer,
- wherein the carrier substrate has a Young's modulus greater than or equal to 150 GPa and a transmission from greater than or equal to 60% to less than or equal to 90% at a wavelength of approximately 1 μm.
A carrier substrate comprising a polycrystalline ceramic, wherein
- the carrier substrate has a Young's modulus greater than or equal to 150 GPa,
- the carrier substrate has a coefficient of thermal expansion of greater than or equal to 20×10−7/° C. to less than or equal to 120×10−7/° C. over a range from 25° C. to 500° C., and
- the carrier substrate has a transmission from greater than or equal to 30% to less than or equal to 90% at a wavelength of approximately 1 μm.
Dependencies are inferred from the claim text.