Wiring substrate and semiconductor device

A semiconductor device comprising:

• a wiring substrate;
• a first semiconductor element that includes a first electrode terminal and a second electrode terminal;
• and
• a second semiconductor element that includes a third electrode terminal and a fourth electrode terminal, wherein
• the wiring substrate includes:
• a wiring component connected to the first semiconductor element and the second semiconductor element,
• wherein the wiring component includes
• a first connection terminal exposed on an upper surface of the wiring component and connected to the first electrode terminal of the first semiconductor element,
• a second connection terminal exposed on the upper surface of the wiring component and connected to the third electrode terminal of the second semiconductor element, and
• an internal connection terminal formed on a lower surface of the wiring component, and
• the wiring component electrically connects the first electrode terminal of the first semiconductor element and the third electrode terminal of the second semiconductor element;
• a third connection terminal connected to the second electrode terminal of the first semiconductor element;
• a fourth connection terminal connected to the fourth electrode terminal of the second semiconductor element;
• an insulation layer that embeds the wiring component, the third connection terminal, and the fourth connection terminal;
• and
• a wiring layer formed on a lower surface of the insulation layer and connected to the internal connection terminal, wherein
• upper surfaces of the first to fourth connection terminals are located coplanar with one another.