Technologies for selectively etching oxide and nitride materials and products formed using the same
AssigneeIntel Corporation
InventorsJason A. Farmer, Gopinath Trichy, Justin S. Sandford, Daniel B. Bergstrom
Life of this patent
Estimating the term…
Abstract
Technologies for selectively etching oxide and nitride materials on a work piece are described. Such technologies include methods for etching a work piece with a remote plasma that is produced by igniting a plasma gas flow. By controlling the flow rate of various components of the plasma gas flow, plasmas exhibiting desired etching characteristics may be obtained. Such plasmas may be used in single or multistep etching operations, such as recess etching operations that may be used in the production of non-planar microelectronic devices.
Claims11
A microelectronic device, comprising:
- first and second fins laterally offset by a fin pitch less than or equal to 50 nm so as to define a first field there between;
- a conformal oxide layer disposed on at least a portion of said first and second fins;
- a conformal nitride layer disposed on at least a portion of said first and second fins and on at least a portion of said conformal oxide layer;
- and
- a sacrificial oxide material disposed at least within said first field;
- wherein:
- said first and second fins extend above said conformal oxide and nitride layers by at least 35 nm;
- and
- said conformal nitride layer on said first and second fins protrudes above an upper surface of said sacrificial oxide material within said first field by less than about 5 nm.
Dependencies are inferred from the claim text.