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US 2018/0005840 A1Published application
Surface Treatment in a Chemical Mechanical Process
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Wen Liu, Che-Hao Tu, Po-Chin Nien, William Weilun Hong, Ying-Tsung Chen
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Abstract
A method is presented that includes the step of polishing a wafer positioned on a platen. After polishing the wafer, the method includes initiating a high pressure rinse on the wafer while the wafer is positioned on the platen, wherein the high pressure rinse includes a hydrophilic solution. The wafer is soaked in the hydrophilic solution, and after soaking the wafer, the wafer is cleaned.
Claims23
A method comprising:
- polishing a wafer positioned on a first platen;
- after polishing the wafer, initiating a rinse while the wafer is positioned on the first platen, wherein the rinse includes a hydrophilic solution;
- soaking the wafer in the hydrophilic solution for approximately 5 to 30 seconds;
- continuously rotating the wafer while soaking the wafer in the hydrophilic solution;
- and
- after soaking the wafer, cleaning the wafer.
3 more elements
(canceled)
A method comprising:
- positioning a wafer on a first platen;
- conducting a chemical mechanical polishing (CMP) on the wafer;
- rinsing the wafer with a solution, the solution configured to form a hydrophilic surface;
- soaking the wafer in the solution;
- while soaking the wafer, rotating the first platen;
- after rinsing the wafer, transferring the wafer from the first platen to a second platen;
- and
- cleaning the wafer.
5 more elements
(canceled)
A method comprising:
- positioning a wafer over a first platen;
- conducting a chemical mechanical polishing (CMP) process on the wafer;
- performing a pressurized rinse of the wafer using a hydrophilic solution;
- after performing the pressurized rinse, soaking the wafer for approximately 10 seconds by keeping the wafer in the hydrophilic solution;
- while soaking the wafer, rotating the wafer;
- changing a surface of the wafer from hydrophobic to hydrophilic;
- after rinsing the wafer, transferring the wafer from the first platen to a second platen;
- and
- after transferring the wafer, cleaning the wafer with a brush or megasonic cleaning.
6 more elements
(canceled)
Dependencies are inferred from the claim text.