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US 2018/0005836 A1Published application
Method of fabricating semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsJAE SOON LIM, GYU HEE PARK, YOUN JOUNG CHO, HYUN SUK LEE, GI HEE CHO
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Abstract
A method of fabricating a semiconductor device includes feeding a suppression gas, a source gas, a reactive gas, and a purge gas including an inert gas, into a process chamber in which a substrate is disposed. The suppression gas suppresses the physical adsorption of the source gas onto the substrate. As a result, a thin film is formed on the substrate
Claims20
A method of fabricating a semiconductor device, comprising:
- providing a substrate;
- and
- forming a thin film on the substrate by a process comprising:
- feeding a suppression gas onto the substrate;
- feeding a source gas;
- feeding a reactive gas;
- and
- feeding a purge gas comprising an inert gas,
- wherein the suppression gas suppresses a physical adsorption of the source gas by the substrate.
6 more elements
A method of manufacturing a semiconductor device, the method comprising:
- supporting an intermediate structure of a semiconductor device in a process chamber, the intermediate structure having an upper surface and an opening therein extending from the upper surface so as to have an aspect ratio, wherein the intermediate structure includes an internal bottom surface delimiting a bottom of the opening and an internal side surface delimiting a side of the opening;
- and
- a film forming process of conformally forming a film of substantially uniform thickness on the intermediate structure including on the top surface and on the internal bottom surface of the structure,
- the film forming process comprising:
- feeding, into the process chamber, a source gas that is a precursor of the film and at least some of which is adsorbed by the structure at the top surface and internal bottom surface of the intermediate structure,
- feeding, into the process chamber, a reactive gas that is a precursor of the film and reacts chemically with the source gas, and
- feeding, into the process chamber, a suppression gas which is not a precursor of the film, which is not reactive with the source gas, and at least some of which is adsorbed by the top and internal bottom surface of the intermediate structure, and
- feeding, into the process chamber, inert gas to purge the chamber of at least some of the gas that is in the process chamber, wherein the feeding of inert gas is carried out at one or more points in the film forming process after the source gas has been fed into the process chamber.
5 more elements
A semiconductor device fabricating equipment, comprising:
- a chamber;
- a substrate support disposed in the chamber and having a substrate mounted thereon;
- a source gas supply supplying a source gas into the chamber;
- a reactive gas supply supplying a reactive gas into the chamber;
- a suppression gas supply supplying a suppression gas, which suppresses physical adsorption of the source gas onto the substrate, into the chamber;
- and
- a first purge gas supply supplying a first purge gas into the chamber.
4 more elements
Dependencies are inferred from the claim text.