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US 2018/0005835 A1Published application
Memory device
AssigneeUnited Microelectronics Corp.
InventorsKun-Huang Yu, Shih-Yin Hsiao
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Abstract
Provided is a memory device including a first gate, a second gate and an inter-gate dielectric layer. The first gate is buried in a substrate. The second gate includes metal and is disposed on the substrate. The inter-gate dielectric layer is disposed between the first and second gates. The inter-gate dielectric layer comprises a high-k layer having a dielectric constant of greater than about 10.
Claims10
A memory device, comprising:
- a first gate, buried in the substrate;
- a second gate, disposed on the substrate, wherein the second gate comprises metal;
- and
- an inter-gate dielectric layer, disposed between the first gate and the second gate, wherein the inter-gate dielectric layer comprises a high-k layer having a dielectric constant of greater than about 10.
1 more element
Dependencies are inferred from the claim text.