High aspect ratio gates
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Sivananda K. Kanakasabapathy, Peng Xu
Life of this patent
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Abstract
Embodiments are directed to a method of forming a feature of a semiconductor device. In one or more embodiments, the feature is a gate, and the method includes forming a substrate and forming a gate material extending over a major surface of the substrate. The method further includes forming a trench extending through the gate material and into the substrate in a first direction, wherein the trench further extends through the gate material and the substrate in a second direction. The method further includes filling the trench with a fill material and forming individual gates from the gate material, wherein the individual gates extend along a third direction.
Claims20
A semiconductor structure comprising:
- a first trench extending into a substrate in a first direction and a second direction, wherein the first direction is substantially perpendicular to the second direction;
- a first anchor formed in the first trench;
- a top portion of the first anchor extending above a major surface of the substrate;
- and
- individual feature structures formed over the major surface of the substrate;
- wherein the individual features structures extend along a third direction;
- wherein each of the individual feature structures is physically coupled to the top portion f the first anchor.
A semiconductor structure comprising:
- a first trench extending into a substrate in a first direction and a second direction, wherein the first direction is substantially perpendicular to the second direction;
- a first anchor formed in the first trench;
- a top portion of the first anchor extending above a major surface of the substrate;
- and
- individual gate structures formed over the major surface of the substrate;
- wherein the individual gate structures extend along a third direction;
- wherein each of the individual gate structures is physically coupled to the top portion f the first anchor.
Dependencies are inferred from the claim text.