High aspect ratio gates
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Sivananda K. Kanakasabapathy, Peng Xu
Life of this patent
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Abstract
Embodiments are directed to a method of forming a feature of a semiconductor device. In one or more embodiments, the feature is a gate, and the method includes forming a substrate and forming a gate material extending over a major surface of the substrate. The method further includes forming a trench extending through the gate material and into the substrate in a first direction, wherein the trench further extends through the gate material and the substrate in a second direction. The method further includes filling the trench with a fill material and forming individual gates from the gate material, wherein the individual gates extend along a third direction.
Claims22
A method of forming a feature of a semiconductor device, the method comprising:
- forming a substrate;
- forming a feature material extending over a major surface of the substrate;
- forming a trench having at least one inner sidewall and extending through the feature material and into the substrate in a first direction, wherein the trench further extends through the feature material and the substrate in a second direction;
- filling the trench with a fill material such that the fill material extends along and physically couples to at least a portion of the at least one inner trench sidewall;
- and
- forming individual feature structures from the feature material;
- wherein each of the individual feature structures comprises:
- a first sidewall having a height (H) dimension extending along a first direction;
- a second sidewall formed from a portion of the at least one inner trench sidewall and having a thickness (T) dimension extending along a second direction;
- and
- a third sidewall having a length (L) dimension extending along a third direction;
- where T is less than H;
- wherein the fill material is physically coupled to the second sidewall of each of the individual feature structures.
(canceled)
(canceled)
A method of forming a feature of a semiconductor device, the method comprising:
- forming a substrate;
- forming a feature material extending over a major surface of the substrate;
- forming a first trench having at least one inner first trench sidewall and extending through the feature material and into the substrate in a first direction, wherein the first trench further extends through the feature material and the substrate in a second direction;
- forming a second trench having at least one inner second trench sidewall and extending through the feature material and into the substrate in the first direction, wherein the second trench further extends through the feature material and the substrate in the second direction;
- filling the first trench with a first fill material such that the first fill material extends along and physically couples to at least a portion of the at least one inner first trench sidewall;
- filling the second trench with a second fill material such that the second fill material extends along and physically couples to at least a portion of the at least one inner second trench sidewall;
- and
- forming individual feature structures from the feature material;
- wherein each of the individual feature structures comprises:
- a first sidewall having a height (H) dimension extending along a first direction;
- at least two second sidewalls each formed from a portion of the at least one inner first trench sidewall or a portion of the at least one inner second trench sidewall, each of the at least two second sidewalls having a thickness (T) dimension extending along a second direction;
- and
- a third sidewall having a length (L) dimension extending along a third direction;
- wherein T is less than H;
- wherein the first fill material is physically coupled to one of the at least two second sidewalls of each of the individual feature structures;
- wherein the second fill material is physically coupled to one of the at least two second sidewalls of each of the individual feature structures.
(canceled)
(canceled)
A semiconductor structure comprising:
- a first trench extending into a substrate in a first direction and a second direction, wherein the first direction is substantially perpendicular to the second direction;
- a first anchor formed in the first trench;
- a top portion of the first anchor extending above a major surface of the substrate;
- individual feature structures formed over the major surface of the substrate;
- wherein the individual features structures extend along a third direction;
- wherein each of the individual feature structures is physically coupled to the top portion f the first anchor.
Dependencies are inferred from the claim text.