Semiconductor Device, Method and Tool of Manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Teng Liao, Tzu-Chan Weng, Yi-Wei Chiu, Chen Yung-Chan, Chia-Tsung Tso, Yu-Li Lin, Chun-Hung Liu, Kun-Cheng Chen
Life of this patent
Estimating the term…
Abstract
A semiconductor manufacturing tool and process to form semiconductor devices is provided. An edge ring of the semiconductor manufacturing tool comprises a high electron mobility material in order to extend an electrical field and sheath such that curvature from the sheath is moved away from a semiconductor wafer so that an impact from the curvature is reduced or eliminated during an etching process.
Claims21
A method of manufacturing a semiconductor device, the method comprising:
- providing a first chuck, the first chuck comprising a first electrode to generate a sheath over the first chuck;
- and
- extending the sheath by placing a first edge ring adjacent to the first chuck, wherein the first edge ring is formed of a high electron mobility material and is electrically isolated from the first chuck.
A method of manufacturing a semiconductor device, the method comprising:
- placing a first edge ring adjacent to a first electrostatic chuck;
- attaching a semiconductor wafer onto the first electrostatic chuck;
- and
- generating a sheath over the semiconductor wafer, the sheath comprising a first region and a second region, wherein ions that enter the first region of the sheath are accelerated at an angle perpendicular to the semiconductor wafer and wherein ions that enter the second region of the sheath are accelerated at an angle that is not perpendicular to the semiconductor wafer, wherein the ions that enter the second region impact the first edge ring and do not impact the semiconductor wafer.
-20. (canceled)
A method of manufacturing a semiconductor device, the method comprising:
- placing a semiconductor wafer into a first tool, the first tool comprising:
- an electrostatic chuck;
- a base ring adjacent to the electrostatic chuck;
- and
- an edge ring extending over both the electrostatic chuck and the base ring and electrically isolated from the electrostatic chuck, wherein the edge ring comprises silicon doped with nitrogen, silicon doped with carbon, silicon doped with fluorine, or silicon doped with oxygen;
- and
- generating a sheath over the semiconductor wafer within the first tool, the sheath accelerating ions at a first angle and at a second angle different from the first angle, wherein the first angle directs ions towards the semiconductor wafer and the second angle directs ions towards the edge ring.
Dependencies are inferred from the claim text.