Back to results
US 2018/0005831 A1Published application
Method of Reducing an Impurity Concentration in a Semiconductor Body
AssigneeInfineon Technologies AG
InventorsHans-Joachim Schulze, Peter Irsigler, Thomas Wuebben
Life of this patent
Estimating the term…
Abstract
A method includes kicking out impurity atoms from substitutional sites of a crystal lattice of a semiconductor body by implanting particles via a first surface into the semiconductor body, reducing a thickness of the semiconductor body by removing semiconductor material of the semiconductor body, and annealing the semiconductor body in a first annealing process at a temperature of between 300° C. and 450° C. to diffuse impurity atoms out of the semiconductor body.
Claims18
A method, comprising:
- kicking out impurity atoms from substitutional sites of a crystal lattice of a semiconductor body by implanting particles via a first surface into the semiconductor body;
- reducing a thickness of the semiconductor body by removing semiconductor material of the semiconductor body;
- and
- annealing the semiconductor body in a first annealing process at a temperature of between 300° C. and 450° C. to diffuse impurity atoms out of the semiconductor body.
1 more element
A semiconductor device, comprising:
- a semiconductor body comprising a first surface and a second surface opposite the first surface, a first region adjoining the first surface and a second region adjoining the second surface, and impurities in a crystal lattice,
- wherein a maximum impurity concentration in the second region is lower than in the first region.
Dependencies are inferred from the claim text.