Forming electrode trenches by using a directed ion beam and semiconductor device with trench electrode structures

A semiconductor device comprising:

• a trench gate structure extending from a first surface into a semiconductor portion, wherein a first sidewall and an opposite second sidewall of the trench gate structure are parallel to each other and the trench gate structure is tilted to a normal to the first surface by a slope angle φ;
• and
• at least one sidewall implant zone directly adjoining to the trench gate structure in a mesa section of the semiconductor portion, wherein the sidewall implant zone is selectively formed along one of the first and second sidewalls.

A semiconductor device comprising:

• electrode structures extending from a first surface into a semiconductor portion, wherein parallel first sidewalls of the electrode structures are vertical to the first surface and second sidewalls opposite to the first sidewalls are tilted to a normal to the first surface by a slope angle φ greater than 1°;
• and
• body regions formed in mesa sections of the semiconductor portion between the electrode structures, wherein the body regions form, in the mesa sections, first pn junctions with a drain structure and second pn junctions with source regions.