Back to results
US 2018/0005828 A1Published application
MANUFACTURING METHOD OF SiC SUBSTRATE
AssigneeFuji Electric Co., Ltd.
InventorsTakeshi FUJII, Mariko SATO, Takuro INAMOTO
Life of this patent
Estimating the term…
Abstract
Provided is a manufacturing method for manufacturing a SiC substrate having a flattened surface, including etching the surface of the SiC substrate by irradiating the surface of the SiC substrate with atomic hydrogen while the SiC substrate having an off angle is heated. In the etching, the SiC substrate may be heated within a range of 800° C. or higher and 1200° C. or lower.
Claims8
A manufacturing method for manufacturing a SiC substrate having a flattened surface, comprising
- etching a surface of the SiC substrate by irradiating the surface of the SiC substrate with atomic hydrogen while the SiC substrate having an off angle is heated.
Dependencies are inferred from the claim text.