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US 2018/0005827 A1Published application
Multi-deposition process for high quality gallium nitride device manufacturing
AssigneeQuora Technology, Inc.
InventorsVladimir Odnoblyudov, Cem Basceri
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Abstract
A group III-nitride (III-N)-based electronic device includes an engineered substrate, a metalorganic chemical vapor deposition (MOCVD) III-N-based epitaxial layer coupled to the engineered substrate, and a hybrid vapor phase epitaxy (HVPE) III-N-based epitaxial layer coupled to the MOCVD epitaxial layer.
Claims20
A group III-nitride (III-N)-based electronic device comprising:
- an engineered substrate;
- a metalorganic chemical vapor deposition (MOCVD) III-N-based epitaxial layer coupled to the engineered substrate;
- and
- a hybrid vapor phase epitaxy (HVPE) III-N-based epitaxial layer coupled to the MOCVD epitaxial layer.
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A method of fabricating a epitaxial structure, the method comprising:
- providing an engineered substrate;
- growing a first epitaxial layer coupled to the engineered substrate using a first deposition process;
- and
- growing a second epitaxial layer coupled to the first epitaxial layer using a second deposition process.
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A method of forming a GaN-based epitaxial structure, the method comprising:
- providing an engineered substrate;
- depositing a first GaN-based epitaxial layer coupled to the engineered substrate using a metalorganic chemical vapor deposition (MOCVD) process;
- and
- depositing a second GaN-based epitaxial layer coupled to the first GaN-based epitaxial layer using a hybrid vapor phase epitaxy (HVPE) deposition process.
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Dependencies are inferred from the claim text.