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US 2018/0005826 A1Published application
Forming a silicon based layer in a trench to prevent corner rounding
AssigneesGlobalfoundries Inc., International Business Machines Corporation
InventorsAjey P. JACOB, Jody FRONHEISER, Bruce DORIS, Huiming BU
Life of this patent
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Abstract
A method of preventing corner rounding for an alternate channel FINFET formed in trenches and the resulting devices are provided. Embodiments include providing a Si substrate; forming a trench in the Si substrate; forming a Si based layer with a flat upper surface in the trench; and forming a SiGe layer over the Si based layer.
Claims20
A method comprising:
- providing a silicon (Si) substrate;
- forming a trench in the Si substrate;
- epitaxial (EPI) pre-baking surfaces of the trench;
- forming a Si based layer with a flat upper surface in the trench;
- and
- forming a silicon germanium (SiGe) layer over the Si based layer.
3 more elements
(canceled)
A device comprising:
- a silicon (Si) substrate;
- a trench formed in the Si substrate;
- a Si based layer with a flat upper surface formed in the trench;
- and
- a silicon germanium (SiGe) layer with no corner rounding formed over the Si based layer.
2 more elements
A method comprising:
- providing a silicon (Si) substrate;
- etching a trench to a depth of 100 nanometer (nm) to 500 nm in the Si substrate by reactive ion etching (RIE);
- epitaxial (EPI) pre-baking surfaces of the trench;
- epitaxially growing a Si based layer with a flat upper surface in the trench;
- and
- epitaxially growing a silicon germanium (SiGe) layer with no corner rounding over the Si based layer.
3 more elements
Dependencies are inferred from the claim text.