Nano-heterostructure
AssigneesTsinghua University, Hon Hai Precision Industry Co., Ltd.
InventorsJIN ZHANG, YANG WEI, KAI-LI JIANG, SHOU-SHAN FAN
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AssigneesTsinghua University, Hon Hai Precision Industry Co., Ltd.
InventorsJIN ZHANG, YANG WEI, KAI-LI JIANG, SHOU-SHAN FAN
Estimating the term…
The present disclosure relates to a nano-heterostructure. The nano-heterostructure includes a semiconductor layer, a first metallic carbon nanotube, a semiconducting carbon nanotube and a second metallic carbon nanotube. The semiconductor layer comprises a first surface and a second surface. The first metallic carbon nanotube is located on the first surface and extends in a first direction. The semiconducting carbon nanotube is located on the first surface and extends in the first direction. The semiconducting carbon nanotube is parallel and spaced away from the first metallic carbon nanotube. The second metallic carbon nanotube is located on the second surface and extends in a second direction. An angle forms between the first direction and the second direction.
A nano-heterostructure comprising:
A nano-heterostructure comprising:
Dependencies are inferred from the claim text.