A field effect transistor using transition metal dichalcogenide and a method for forming the same
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
InventorsShih-Yen LIN, Chi-Wen LIU, Si-Chen LEE, Chong-Rong WU, Kuan-Chao CHEN
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Abstract
In a method of fabricating a field effect transistor, a Mo layer is formed on the substrate. The Mo layer is sulfurized to convert it into a MoS2 layer. Source and drain electrodes are formed on the MoS2 layer. The MoS2 layer is treated with low-power oxygen plasma. A gate dielectric layer is formed on the MoS2 layer. A gate electrode is formed on the gate dielectric layer. An input electric power in the low-power oxygen plasma treatment is in a range from 15 W to 50 W.
Claims20
A method of fabricating a field effect transistor, comprising:
- forming a transition metal dichalcogenide (TMD) layer on a substrate;
- and
- treating the TMD layer with low-power oxygen plasma,
- wherein an input electric power in the low-power oxygen plasma treatment is in a range from 15 W to 50 W.
A method of fabricating a field effect transistor, comprising:
- forming a MoS2 layer on a first substrate;
- forming a gate dielectric layer on a second conductive substrate;
- forming source and drain electrodes on the gate dielectric layer;
- detaching the MoS2 layer from the first substrate and attaching the detached MoS2 layer on the gate dielectric layer and the source and drain electrodes;
- and
- treating the MoS2 layer with low-power oxygen plasma, wherein an input electric power in the low-power oxygen plasma treatment is in a range from 15 W to 50 W.
A method of fabricating a field effect transistor, comprising:
- forming a Mo layer on a substrate;
- sulfurizing the Mo layer into a MoS2 layer;
- forming source and drain electrodes on the MoS2 layer;
- treating the MoS2 layer with low-power oxygen plasma;
- forming a gate dielectric layer on the MoS2 layer;
- and
- forming a gate electrode on the gate dielectric layer, wherein an input electric power in the low-power oxygen plasma treatment is in a range from 15 W to 50 W.
Dependencies are inferred from the claim text.