Cyclical deposition of germanium
AssigneeASM IP Holding B.V.
InventorRaija H. Matero
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Abstract
In some aspects, methods for forming a germanium thin film using a cyclical deposition process are provided. In some embodiments, the germanium thin film is formed on a substrate in a reaction chamber, and the process includes one or more deposition cycles of alternately and sequentially contacting the substrate with a vapor phase germanium precursor and a nitrogen reactant. In some embodiments, the process is repeated until a germanium thin film of desired thickness has been formed.
Claims21
(canceled)
A process for forming an elemental germanium thin film on a substrate in a reaction chamber, the process comprising one or more deposition cycles comprising alternately and sequentially contacting the substrate with a vapor phase germanium precursor and a vapor phase nitrogen reactant, wherein the germanium precursor is not divalent.
A process for depositing an elemental germanium thin film on a substrate in a reaction chamber, the process comprising:
- continuously flowing a nitrogen reactant through the reaction chamber;
- contacting the substrate with a vapor phase germanium precursor, wherein the germanium precursor is tetravalent;
- removing excess vapor phase germanium precursor from the reaction chamber, and
- repeating the contacting and removing steps until an elemental germanium thin film of the desired thickness has been deposited on the substrate.
A method for depositing an elemental germanium thin film on a substrate in a reaction chamber the method comprising:
- conducting a deposition cycle comprising, in order:
- contacting the substrate with a first vapor phase tetravalent germanium precursor;
- exposing the substrate to a purge gas and/or a vacuum;
- contacting the substrate with a second vapor phase nitrogen reactant;
- and
- exposing the substrate to a purge gas and/or a vacuum;
- and
- repeating the deposition cycle to form an elemental germanium thin film on the substrate,
- wherein the second reactant does not comprise H2 or H2-based plasma species, and
- wherein the elemental germanium thin film has less than 5% impurities.
Dependencies are inferred from the claim text.