Combined reactive gas species for high-mobility channel passivation
AssigneesInternational Business Machines Corporation, ULVAC Technologies, Inc.
InventorsTakashi Ando, Vijay Narayanan, Yohei Ogawa, John Rozen
Life of this patent
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Abstract
A technique relates to in-situ cleaning of a high-mobility substrate. Alternating pulses of a metal precursor and exposure to a plasma of a gas or gas mixture are applied. The gas or gas mixture contains both nitrogen and hydrogen (e.g., NH3). A passivation layer is formed on the high-mobility substrate by alternating pulses of the metal precursor and exposure to the plasma of a gas, or gas mixture, containing both nitrogen and hydrogen.
Claims25
A method of in-situ cleaning of a substrate, the method comprising:
- applying to the substrate a combination of alternating pulses of a metal precursor and exposure to a plasma of a gas or a gas mixture, the gas or the gas mixture containing both nitrogen and hydrogen;
- and
- forming a passivation layer on the substrate by applying the combination of alternating pulses of the metal precursor and the exposure to the plasma of the gas or the gas mixture.
A method of forming an interface layer on a substrate, the method comprising:
- forming the interface layer on the substrate;
- and
- converting the interface layer into a metal oxide by a combination of repeatedly alternating pulses of a metal precursor and exposure to a plasma of a gas or a gas mixture, the gas or the gas mixture containing both nitrogen and hydrogen.
A method of in-situ cleaning for a semiconductor device, the method comprising:
- forming an interface layer on a substrate;
- exposing the interface layer to a plasma of a gas or a gas mixture, thereby cleaning the interface layer, wherein the gas or the gas mixture contains both nitrogen and hydrogen;
- and
- applying in-situ a combination of alternating pulses of a metal precursor and exposure to a plasma of a gas or a gas mixture to the interface layer having been cleaned so as to form a metal-oxide interface layer, the gas or the gas mixture containing both nitrogen and hydrogen.
(canceled)
A method of forming a semiconductor device, the method comprising:
- forming one or more three dimensional channels on a substrate;
- and
- forming an interface layer on top of the one or more three dimensional channels, wherein the interface layer is formed by a combination of alternating pulses of a metal precursor and exposure to a plasma of a gas or a gas mixture, the gas or the gas mixture containing both nitrogen and hydrogen.
Dependencies are inferred from the claim text.