Substrate processing method for depositing a barrier layer to prevent photoresist poisoning
AssigneeLam Research Corporation
InventorsDavid Cheung, Ilia Kalinovski
Life of this patent
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Abstract
A method for depositing a barrier layer includes a) arranging a substrate including a nitride layer in a processing chamber; b) setting a process temperature in the processing chamber to a predetermined process temperature range; c) setting a process pressure in the processing chamber to a predetermined process pressure range; d) supplying at least one of a gas and a vapor including an organosilane precursor species; and e) depositing a barrier layer on the nitride layer. The barrier layer reduces diffusion of nitrogen-containing groups in the nitride layer into a photoresist layer that is subsequently deposited on the nitride layer.
Claims20
A method for depositing a barrier layer, comprising:
- a) arranging a substrate including a nitride layer in a processing chamber;
- b) setting a process temperature in the processing chamber to a predetermined process temperature range;
- c) setting a process pressure in the processing chamber to a predetermined process pressure range;
- d) supplying at least one of a gas and a vapor including an organosilane precursor species;
- and
- e) depositing a barrier layer on the nitride layer,
- wherein the barrier layer reduces diffusion of nitrogen-containing groups in the nitride layer into a photoresist layer that is subsequently deposited on the nitride layer.
Dependencies are inferred from the claim text.