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US 2018/0005818 A1Published application
Contaminant removal in ultra-thin semiconductor device fabrication
AssigneeTexas Instruments Incorporated
InventorsQin Xu YU, Tian Yi ZHANG, Jian Jun KONG
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Abstract
A chemical solution cleaning process for removing backside contamination prior to metallization involves selective chemistries of a mixture containing NH4OH and H2O2 that may be diluted to specific concentrations depending upon the topside metal and passivation of a semiconductor wafer, which is applied after removing a topside protection material to protect the topside circuitry.
Claims8
A method of fabricating a semiconductor device, the method comprising:
- forming topside circuitry for an integrated circuit (IC) on a topside of a semiconductor substrate of the semiconductor device, the topside circuitry having a topside metal structure and a topside passivation structure;
- applying a topside protection material to protect the topside circuitry;
- grinding a backside of the semiconductor substrate to a selected thickness;
- removing the topside protection material;
- after removal of the topside protection material, applying a chemical solution cleaning process to remove contaminants from the backside of the semiconductor substrate;
- applying a deionized (DI) water cleaning process to the semiconductor substrate after the chemical cleaning process;
- and
- forming a backside metallization (BSM) layer over the backside of the semiconductor substrate.
5 more elements
Dependencies are inferred from the claim text.