Method for manufacturing a trench channel for a vacuum transistor device and vacuum transistor device
AssigneeSTMicroelectronics S.r.l.
InventorsAntonino Fiumara, Marcello Frazzica, Giuseppe Digrazia
Life of this patent
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Abstract
A method for manufacturing a microelectronic semiconductor device comprising the steps of: forming a trench in a body, the trench having side walls, a opening, and a bottom; forming a sacrificial layer in the trench; forming a recess in the sacrificial layer; forming a restriction structure between the sacrificial layer and the opening of the trench, defining a through hole for access to the sacrificial layer; completely removing the sacrificial layer through said through hole; and depositing a metal layer over the body, thus closing the opening of the trench and forming an electron-emission cathode tip.
Claims20
A method for manufacturing a microelectronic semiconductor device comprising:
- forming a trench in a body, the trench having side walls, an opening, and a bottom;
- and
- forming a sacrificial layer completely filling of the trench;
- forming a recess in the sacrificial layer, releasing the opening of the trench;
- forming a restriction structure between the sacrificial layer and the opening of the trench, said restriction structure defining a through hole that forms a path for accessing the sacrificial layer from the opening;
- removing the sacrificial layer through said through hole;
- and
- depositing a metal layer over the body, the metal layer closing the opening of the trench.
A microelectronic semiconductor device comprising:
- a body;
- a trench which extends in the body, the trench having side walls, an opening, and a bottom;
- a restriction structure, which extends in the trench, adjacent to the opening of the trench, the restriction structure extending from the side walls of the trench surrounding the opening and defining a through hole;
- and
- a metal layer over the body, the metal layer penetrating in, and contacting, the through hole and forming an electron-emission tip.
A microelectronic semiconductor device comprising:
- a body;
- a trench which extends in the body, the trench having side walls, an opening, and a bottom;
- a restriction structure that extends in the trench, adjacent to the opening of the trench, and defining a through hole, the restriction structure including:
- a first insulating layer having a lateral portion, lining upper portions of the sidewall of the recess, and a bottom portion extending inwardly from the lateral portion;
- and
- an annular second insulating layer having a lateral sidewall contacting the later portion of the first insulating layer and a bottom wall contacting the bottom portion of the first insulating layer;
- and
- a metal layer extending through the through hole and forming an electron-emission tip.
Dependencies are inferred from the claim text.