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AssigneeHeadway Technologies, Inc.
InventorsLuc Thomas, Guenole Jan, Ru-Ying Tong
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An improved magnetic tunnel junction with two oxide interfaces on each side of a ferromagnetic layer (FML) leads to higher PMA in the FML. The novel stack structure allows improved control during oxidation of the top oxide layer. This is achieved by the use of a FML with a multiplicity of ferromagnetic sub-layers deposited in alternating sequence with one or more non-magnetic layers. The use of non-magnetic layers each with a thickness of 0.5 to 10 Angstroms and with a high resputtering rate provides a smoother FML top surface, inhibits crystallization of the FML sub-layers, and reacts with oxygen to prevent detrimental oxidation of the adjoining ferromagnetic sub-layers. The FML can function as a free or reference layer in an MTJ. In an alternative embodiment, the non-magnetic material such as Mg, Al, Si, Ca, Sr, Ba, and B is embedded by co-deposition or doped in the FML layer.
A magnetic structure comprising a ferromagnetic layer having perpendicular magnetic anisotropy (PMA) that is formed between a substrate and a first oxide layer (OL1) wherein the ferromagnetic layer comprises:
A magnetic structure formed on a substrate and comprising a ferromagnetic layer having perpendicular magnetic anisotropy (PMA) that is formed between a non-ferromagnetic metallic (NM) layer that is one of Mo, W, and NiCr, and a first oxide layer (OL1) wherein the ferromagnetic layer comprises:
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16-17. (canceled)
19-29. (canceled)
A magnetic structure formed on a substrate and comprising a ferromagnetic (FM) layer having perpendicular magnetic anisotropy (PMA) wherein the FM layer has a first surface contacting a non-ferromagnetic metallic (NM) layer and a second surface that contacts a first oxide layer (OL1), wherein the FM layer comprises:
Dependencies are inferred from the claim text.