Stress control in magnetic inductor stacks

A method of forming an inductor structure, comprising:

• depositing a first grouping of alternating magnetic and insulating layers on a processed substrate,
• patterning the first grouping to provide a plurality of film stacks comprising the first grouping, wherein the film stacks are separated by a space;
• depositing a conformal layer of a dielectric isolation layer onto the patterned first grouping;
• depositing at least one additional grouping of alternating magnetic and insulating layers onto the dielectric isolation layer;
• and
• selectively removing the at least one additional grouping from the space;
• wherein the magnetic layers have a cumulative thickness greater than 1 micron.

A method of forming an inductor structure, comprising:

• forming multiple film stacks separated by a space, wherein the multiple film stacks comprise a first grouping of alternating magnetic and insulating layers on a processed substrate;
• forming at least one additional grouping on the multiple film stacks the additional grouping comprising alternating magnetic and insulating layers;
• and
• providing a dielectric isolation layer intermediate the first grouping and the at least one additional grouping,
• wherein the magnetic layers have a cumulative thickness greater than 1 micron.