Fuse element programming circuit and method

A method of forming a programming circuit for a fuse element comprising:

• forming the fuse element having a first semiconductor layer and a silicide layer wherein the first semiconductor layer has a first resistivity and the silicide layer has a second resistivity;
• forming a body region of a programming element from substantially the first semiconductor layer and to have a third resistivity that is substantially equal to the first resistivity wherein the body region is substantially devoid of a silicide material;
• and
• configuring the programming circuit to control a value of a programming current through the fuse element using the programming element.

A method of forming an OTP programming circuit comprising:

• forming a fuse element having a resistance, a first semiconductor layer formed from a semiconductor material, and a silicide layer wherein the first semiconductor layer has a body region having a body resistivity that is substantially a first resistivity, and the silicide layer has a second resistivity that is less than the first resistivity;
• configuring a programming circuit having a reference circuit configured to apply a voltage to a programming element to form a control current that flows through the programming element and through the reference circuit;
• forming a current mirror of the programming circuit to conduct the control current and form a programming current;
• and
• configuring the programming circuit to control a value of the programming current through the fuse element responsively to a body region of the programming element wherein the body region of the programming element is formed from substantially the semiconductor material and wherein the programming current increases the resistance of the fuse element.