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US 2018/0005701 A1Published application
High Speed And Low Power Sense Amplifier
AssigneeSilicon Storage Tech., Inc.
InventorsXiao Yan Pi, Xiaozhou Qian, Kai Man Yue, Yao Zhou, Yaohua Zhu
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Abstract
An improved sensing circuit is disclosed that utilizes a bit line in an unused memory array to provide reference values to compare against selected cells in another memory array. A circuit that can perform a self-test for identifying bit lines with leakage currents about an acceptable threshold also is disclosed.
Claims11
A system for detecting leakage current associated with a bit line in a memory system, comprising
- a first circuit for generating a reference current;
- a second circuit that generates leakage current associated with the bit line;
- a first node coupled to the first circuit and second circuit;
- a second node that exhibits a constant voltage;
- a comparator that comprises the first node as an input and the second node as an input, wherein an output of the comparator indicates if the leakage current exceeds the reference current.
2 more elements
A method of detecting leakage current associated with a bit line in a memory system, comprising:
- generating a reference current at a first node;
- generating a leakage current associated with the bit line at the first node;
- generating a constant voltage at a second node;
- comparing a voltage of the first node and a voltage of the second node and generating an output voltage that indicates if the leakage current exceeds the reference current.
1 more element
Dependencies are inferred from the claim text.