Method of programming semiconductor memory device
AssigneeSK hynix Inc.
InventorsEun Mee KWON, Ji Seon KIM, Sang Tae AHN
Life of this patent
Estimating the term…
Abstract
In a method of programming a semiconductor memory device, during a standby period, a standby voltage is applied to word lines coupled to a plurality of memory cells included in a selected memory cell string, and, during a first program period, a first pre-bias voltage is applied to a word line coupled to at least one of programmed memory cells of the selected memory cell string. The first pre-bias voltage is greater than the standby voltage.
Claims23
A method of programming a semiconductor memory device including a plurality of memory cell strings, the method comprising:
- during a standby period, applying a standby voltage to word lines coupled to a plurality of memory cells included in a selected memory cell string;
- and
- during a first program period, applying a first pre-bias voltage to a word line coupled to at least one of programmed memory cells of the selected memory cell string, the first pre-bias voltage being greater than the standby voltage.
A method of programming a semiconductor memory device including a plurality of memory cell strings, the method comprising:
- precharging a channel region of a selected memory cell string;
- applying a pass voltage to word lines coupled to memory cells included in the selected memory cell string;
- and
- applying a program voltage to a word line coupled to a program target cell of the selected memory cell string,
- wherein, in applying the pass voltage to the word lines coupled to the memory cells included in the selected memory cell string, a first pass voltage is applied to word lines coupled to the program target cell and a first memory cell group located adjacent to the program target cell, a first cutoff voltage is applied to word lines coupled to a second memory cell group located adjacent to the first memory cell group, and a second pass voltage is applied to word lines coupled to a third memory cell group located adjacent to the second memory cell group.
Dependencies are inferred from the claim text.