Cell Structure for Dual-Port Static Random Access Memory

A dual port static random access memory (SRAM) cell comprising:

• two cross-coupled inverters for date storage, wherein the two cross-coupled inverters include a first pull up device (WPU1), a second pull up device (WPU2), a first pull down device (WPD1) and a second pull down device (WPD2);
• a write port that includes a first pass gate device (WPG1) and a second pass gate device (WPG2) connected to the two cross-coupled inverters for writing;
• and
• a read port that includes a read pull down device (RPD) and a read pass gate device (RPG) connected to the two cross-coupled inverters for reading, wherein the RPD includes three fin field-effect transistors (FinFETs), and the RPG includes two FinFETs.

A dual port static random access memory (SRAM) cell comprising:

• two cross-coupled inverters for date storage, wherein the two cross-coupled inverters include a first pull up device (WPU1), a second pull up device (WPU2), a first pull down device (WPD1) and a second pull down device (WPD2);
• a write port that includes a first pass gate device (WPG1) and a second pass gate device (WPG2) connected to the two cross-coupled inverters for writing;
• a read port that includes a read pull down device (RPD) and a read pass gate device (RPG) connected to the two cross-coupled inverters for reading, wherein the RPD includes three fin field-effect transistors (FinFETs), and the RPG includes two FinFETs;
• and
• a first, second and third fin active features disposed within a read port, wherein
• the first fin active feature has a discontinuous structure,
• the second and third active features each have a continuous structure that extends to two adjacent SRAM cell,
• the second fin active feature is spaced a first distance from the first fin active feature and is spaced a second distance from the third fin active feature, the second distance being less than the first distance,
• the RPD includes three fin field-effect transistors (FinFETs) formed on the first, second and third fin active features, respectively, and
• the RPG includes two FinFETs formed on the second and third fin active features, respectively.