Integrated circuit and method of manufacturing same

An integrated circuit, comprising:

• a first set of conductive traces in a first layer of an integrated circuit, the first set of conductive traces extending in a first direction;
• a second set of conductive traces in a second layer of an integrated circuit different from the first layer, the second set of conductive traces extending in a second direction different from the first direction;
• and
• a first via electrically coupled between a first conductive trace of the first set of conductive traces and a first conductive trace of the second set of conductive traces,
• wherein a second conductive trace of the first set of conductive traces is part of a first dummy transistor.

An integrated circuit, comprising:

• a first PMOS transistor, comprising a gate;
• a first NMOS transistor, comprising a gate;
• a first dummy transistor;
• a first set of conductive traces extending in a first direction in a first layer of an integrated circuit, a first conductive trace of the first set of conductive traces being the gate of the first PMOS transistor, and a second conductive trace of the first set of conductive traces being the gate of the first NMOS transistor;
• and
• a second set of conductive traces extending in a second direction in a second layer of the integrated circuit different from the first layer,
• wherein a first conductive trace of the second set of conductive traces and the first conductive trace of the first set of conductive traces are configured to electrically couple the first PMOS transistor and the first NMOS transistor as a first transmission gate.