Method of operation for a nonvolatile memory system and method of operating a memory controller
AssigneeSamsung Electronics Co., Ltd.
InventorsYOUNG-HO PARK, CHANIK PARK
Life of this patent
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Abstract
A method of operating a nonvolatile memory system including a memory device having a plurality of memory blocks includes selecting a source block among the plurality of memory blocks in the nonvolatile memory system, and performing a reclaim operation for the source block based on the number of program and erase cycles which have been performed on the source block.
Claims20
A method of operating a nonvolatile memory device including a plurality of memory blocks, the method comprising:
- selecting a source block from among the plurality of memory blocks upon detecting that a number of error bits, equal to or greater than a reference value, has occurred during a read operation on the source block;
- and
- determining a number of program/erase cycles (P/E cycles) of the source block, if the number of P/E cycles being greater than a first value, then starting a first reclaim operation on the source block at first read count, and, if the number of P/E cycles being equal to or smaller than the first value, then starting a second reclaim operation on the source block at second read count,
- wherein the first read count and the second read count are numbers of read operations performed on the nonvolatile memory device, and the first read count is smaller than the second read count.
The method of claim 3, wherein a first number of error bits occurred during a first read operation performed at the first read count is substantially same with a second number of error bits occurred during a second read operation performed at the second read count.
A nonvolatile memory system, comprising:
- a nonvolatile memory device including a plurality of memory blocks;
- and
- a memory controller configured to:
- select a source block from among the plurality of memory blocks upon detecting that a number of error bits, equal to or greater than a reference value, has occurred during a read operation for the source block;
- and
- determine a number of program/erase cycles (P/E cycles) of the source block, if the number of P/E cycles being greater than a first value, then starting a first reclaim operation on the source block at first read count, and, if the number of P/E cycles being equal to or smaller than the first value, then starting a second reclaim operation on the source block at second read count,
- wherein the first read count and the second read count are numbers of read operations performed on the nonvolatile memory device, and the first read count is smaller than the second read count.
The nonvolatile memory system of 13, wherein a first number of error bits occurred during a first read operation performed at the first read count is substantially same with a second number of error bits occurred during a second read operation performed at the second read count.
Dependencies are inferred from the claim text.