Storage device including nonvolatile memory device and controller with varied read weights

A storage device, comprising:

• a nonvolatile memory device comprising a plurality of memory blocks, each of which comprises string selection transistors connected to a plurality of string selection lines, ground selection transistors connected to a plurality of ground selection lines, and memory cells connected to a plurality of word lines;
• and
• a controller configured to read data from selected memory cells, which correspond to both a word line and a string selection line selected as a read target, of a memory block selected as a selected memory block from the memory blocks, during a read operation,
• wherein the controller is configured to increase a read count for the selected memory block by a read weight corresponding to the selected word line and string selection line of the selected memory block and to perform a refresh operation on the selected memory block if the read count reaches a threshold value, and
• wherein, in the selected memory block, a read weight changes according to which of the plurality of string selection lines is selected with respect to the selected word line,
• wherein the controller is configured to read page data selected from a plurality of page data written in the selected memory cells and to select a value corresponding to the selected string selection line, the selected word line, and the selected page data as the read weight.

A storage device, comprising:

• a nonvolatile memory device comprising a plurality of memory blocks each comprising a plurality of memory cells stacked in a direction perpendicular to a substrate and connected with a plurality of word lines;
• and
• a controller configured to read data from selected memory cells, which correspond to a word line selected as a read target, of a memory block selected as a selected memory block from the memory blocks, during a read operation,
• wherein the controller is configured to increase a read count for the selected memory block by a read weight corresponding to the selected word line of the selected memory block and to perform a refresh operation on the selected memory block if the read count reaches a threshold value, and
• wherein, in the selected memory block, the controller decreases the read weight as a distance between the selected memory cells and the substrate increases, and
• wherein the controller is configured to adjust the read weight based on a temperature.