Lithographic Patterning Process and Resists to Use Therein
AssigneeASML Netherlands B.V.
InventorsSander Frederik WUISTER, Oktay YILDIRIM, Gijsbert RISPENS, Alexey Olegovich POLYAKOV
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Abstract
A resist composition is disclosed which comprises a perovskite material with a structure having a chemical formula selected from ABX3, A2BX4, or ABX4, wherein A is a compound containing an NH3 group, B is a metal and X is a halide constituent. The perovskite material may comprise one or more of the following components: halogen-mixed perovskite material; metal-mixed perovskite material, and organic ligand mixed perovsikte material.
Claims20
1-47. (canceled)
A resist composition comprising a perovskite material.
A pattern forming process in a resist comprising:
- applying a resist composition comprising a perovskite material onto a substrate to form a coating;
- baking the coating;
- exposing the coating to high-energy radiation;
- and
- developing the exposed coating in a developer.
A method for producing a resist composition comprising a perovskite material, wherein the perovskite material and/or the resist composition is synthesized at room temperature.
Using a perovskite material having a structure with a chemical formula selected from ABX3, A2BX4, ABX4, or mixtures of such perovskite materials, for a lithographic process of manufacturing integrated circuit, wherein A is a compound containing an NH3 group, B is a metal and X is a halide constituent.
A substrate coated with a layer of a resist composition comprising a perovskite material.
Dependencies are inferred from the claim text.