Device and method for measuring electric field by using mos capacitor
AssigneeSnu R&Db Foundation
InventorsSang Lyul MIN, Yong Hun LEE
Life of this patent
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Abstract
One embodiment provides a technique of adjusting a gate voltage to be applied to at least one MOS capacitor and an amount of electric charges to be stored in the MOS capacitor so as to determine a sensitivity of a change in the amount of electric charges stored in the MOS capacitor, and exposing the MOS capacitor to an electric filed for a predetermined amount of time and then reading an electron inflow or outflow result due to the electric field so as to interpret the intensity and the direction of the electric field, thereby measuring the intensity and the direction of the electric field.
Claims66
An electric field measurement device for measuring an electric field, the electric field measurement device comprising:
- a metal-oxide-semiconductor (MOS) capacitor exposed to an electric field;
- and
- a control unit configured to control the MOS capacitor so that information stored in the MOS capacitor is changed by the electric field.
An electric field measurement device for measuring an electric field, the electric field measurement device comprising:
- a measurer comprising a plurality of metal-oxide-semiconductor (MOS) capacitors;
- and
- a control unit configured to control the measurer so that information stored in at least one MOS capacitor among the plurality of MOS capacitors is changed by an electric field.
An electric field measurement method using a metal-oxide-semiconductor (MOS) capacitor, the electric field measurement method comprising:
- initializing an electric field measurement device by storing first information in at least one MOS capacitor included in the electric field measurement device before the at least one MOS capacitor is exposed to an electric field;
- controlling the at least one MOS capacitor in which the first information is stored, to measure the electric field;
- receiving second information stored in the at least one MOS capacitor after the at least one MOS capacitor is exposed to the electric field;
- and
- acquiring at least one of information associated with an intensity of the electric field or information associated with a direction of the electric field based on the first information and the second information.
Dependencies are inferred from the claim text.