Microfabricated ultrasonic transducers and related apparatus and methods
AssigneeButterfly Network, Inc.
InventorsJonathan M. Rothberg, Susan A. Alie, Keith G. Fife, Nevada J. Sanchez, Tyler S. Ralston
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Abstract
Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.
Claims20
An ultrasound device, comprising a wire bond contacting an electrode region of a capacitive micromachined ultrasonic transducer (CMUT).
An ultrasound device, comprising:
- a first substrate having a capacitive micromachined ultrasonic transducer (CMUT) flush with a top surface of the first substrate, the CMUT comprising a cavity and a silicon layer at least partially sealing the cavity;
- a node disposed on the silicon layer;
- a second substrate having an integrated circuit formed therein, the second substrate bonded to the first substrate;
- a bond pad disposed on the second substrate and electrically connected to the integrated circuit;
- and
- a conductive path disposed between the node and the bond pad, wherein the conductive path is external to the first and second substrates.
A method of electrically contacting a capacitive micromachined ultrasonic transducer (CMUT) in an ultrasound device, the method comprising:
- providing an ultrasound device comprising:
- a first substrate having a CMUT flush with a top surface of the first substrate, the CMUT comprising a cavity and a silicon layer at least partially sealing the cavity;
- a node disposed on the silicon layer;
- a second substrate having an integrated circuit formed therein, the second substrate bonded to the first substrate;
- and
- a bond pad disposed on the second substrate and electrically connected to the integrated circuit;
- and
- forming a conductive path between the node and the bond pad, wherein the conductive path is external to the first and second substrates.
Dependencies are inferred from the claim text.