Membrane device and method for manufacturing same
AssigneeHitachi, Ltd.
InventorsItaru YANAGI, Kenichi TAKEDA
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Abstract
A method for producing a membrane device includes: forming an insulating film as a first film on a Si substrate; forming a Si film as a second film on the entire surface or a part of the first film; forming an insulating film as a third film on the second film; forming an aperture so as to pass through a part of the third film positioned on the second film and not to pass through the second film; etching a part of the substrate on one side of the first film with a solution that does not etch the first film; and etching a part or all of the second film on the other side of the first film with a gas or a solution that does not etch the first film and has an etching rate for the third film lower than an etching rate for the second film.
Claims15
A method for producing a membrane device, comprising:
- forming an insulating film as a first film on a Si substrate as a substrate;
- forming a Si film as a second film on the entire surface or a part of the first film;
- forming an insulating film as a third film on the second film;
- forming an aperture so as to pass through a part of the third film positioned on the second film and not to pass through the second film;
- etching a part of the substrate on one side of the first film with a solution that does not etch the first film;
- etching a part or all of the second film on the other side of the first film with a gas or a solution that does not etch the first film and has an etching rate for the third film lower than an etching rate for the second film, thereby forming a membrane area composed of the first film.
A membrane device, comprising:
- a Si substrate;
- a first film formed on the substrate and made of at least one selected from SiN, HfO2, HfAlOx, ZrAlOx, Ta2O5, SiC, SiCN, a carbon film and a composite thereof;
- a Si film formed on the first film;
- and
- a second film formed on the Si film, wherein a first aperture is formed so as to pass through a part of the Si film positioned on the first film and the second film to reach the first film surface;
- a second aperture is formed so as to pass through a part of the substrate positioned under the first film to reach the first film surface, and
- at least a part of the first film whose surface is exposed from the first aperture and the second aperture is formed as a membrane area having a thickness of 0.3 nm or more and 10 nm or less.
A method for producing a membrane device, comprising:
- forming a SiO2 area on a Si substrate using a LOCOS process or an STI process;
- forming, on the Si substrate and the SiO2 area, a first insulating film made of at least one selected from SiN, HfO2, HfAlOx, ZrAlOx, Ta2O5, SiC, SiCN, a carbon film, and a composite thereof;
- forming a Si film as a second film on a part of the first film;
- forming an insulating film as a third film on the second film;
- forming an aperture so as to pass through a part of the third film positioned on the second film and not to pass through the second film;
- etching a part of the substrate on one side of the first film with a solution that does not etch the first film;
- etching a part or all of the second film on the other side of the first film with a gas or a solution that does not etch the first film and that has an etching rate for the third film lower than an etching rate for the second film, thereby forming a membrane area composed of the first film.
Dependencies are inferred from the claim text.