Furnace for seeded sublimation of wide band gap crystals
AssigneeDow Corning Corporation
InventorMark LOBODA
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AssigneeDow Corning Corporation
InventorMark LOBODA
Estimating the term…
An apparatus for physical vapor transport growth of semiconductor crystals having a cylindrical vacuum enclosure defining an axis of symmetry; a reaction-cell support for supporting a reaction cell inside the vacuum enclosure; a cylindrical reaction cell made of material that is transparent to RF energy and having a height Hcell defined along the axis of symmetry; an RF coil provided around exterior of the vacuum enclosure and axially centered about the axis of symmetry, wherein the RF coil is configured to generate a uniform RF field along at least the height Hcell; and, an insulation configured for generating thermal gradient inside the reaction cell along the axis of symmetry. The ratio of height of the RF induction coil, measured along the axis of symmetry, to the height Hcell may range from 2.5 to 4.0 or from 2.8 to 4.0.
An induction furnace apparatus for growing semiconductor crystals by seeded sublimation growth, comprising:
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A method for physical vapor growth of semiconductor crystal, comprising:
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Dependencies are inferred from the claim text.