Method for manufacturing silicon single crystal ingot, and silicon single crystal ingot manufactured by the method
AssigneeLG Siltron Inc.
InventorsJong Min KANG, Do Won SONG
Life of this patent
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Abstract
An embodiment provides a method for manufacturing a silicon single crystal ingot by using a silicon single crystal growing apparatus comprising: a chamber; a crucible arranged inside the chamber and accommodating a molten silicon solution; a heater arranged outside the crucible so as to heat the crucible; a heat shielding part arranged inside the chamber; and a pulling part for pulling a single crystal growing from the molten silicon solution, wherein the method can comprise a step of respectively growing a neck part, a shoulder part and a body part.
Claims12
A method for manufacturing a silicon single crystal ingot using a silicon single crystal growth apparatus comprising:
- a chamber;
- a crucible arranged within the chamber and accommodating a molten silicon solution;
- a heater arranged outside the crucible so as to heat the crucible;
- a heat shielding part arranged inside the chamber;
- and
- a pulling part to pull a single crystal grown from the molten silicon solution,
- the method comprising growing a neck part, growing a shoulder part and growing a body part,
- wherein growth of the shoulder part includes:
- a first operation of decreasing a pulling speed of the shoulder part from a first pulling speed to a second pulling speed and decreasing a process temperature drop management value from a first management value to a second management value;
- and
- a second operation of maintaining the second pulling speed of the shoulder part and maintaining the second management value.
Dependencies are inferred from the claim text.