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US 2018/0001597 A1Published application
Method for forming copper film
AssigneeTokyo Electron Limited
InventorsHiroyuki TOSHIMA, Atsushi SHIMADA, Tatsuo HIRASAWA, Tatsuo HATANO, Shinji FURUKAWA
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Abstract
A method for forming a copper film is provided. In the method, a base film that is a titanium nitride film, a tungsten film or a tungsten nitride film is formed along a surface of an insulating film of an object. A copper film is formed on the base film of the object cooled to a temperature of 209 K or less.
Claims5
A method for forming a copper film, the method comprising:
- forming a base film that is a titanium nitride film, a tungsten film or a tungsten nitride film along a surface of an insulating film of an object;
- and
- forming a copper film on the base film of the object having the insulating film and the base film after cooling the object to a temperature of 209 K or less.
Dependencies are inferred from the claim text.