Mems transducer package
AssigneeCirrus Logic International Semiconductor Ltd.
InventorsTsjerk HOEKSTRA, David Talmage PATTEN
Life of this patent
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Abstract
A method of fabricating a micro-electrical-mechanical system (MEMS) transducer chip scale package. The method comprising: providing (101) a front side pre-fabricated semiconductor die wafer (1) comprising a plurality of individual die that each comprise at least a MEMS transducer. And back etching (104) the semiconductor die wafer (1) at the back side (4) of the semiconductor die wafer (1) by etching an acoustic die channel (5) through each respective die of the plurality of die and etching a die back volume (6) into each respective die of the plurality of die. The semiconductor die wafer (1) is capped with a cap wafer (16) such that a wafer level packaged MEMS transducer wafer is provided containing multiple MEMS transducer chip scale packages.
Claims24
A method of fabricating a micro-electrical-mechanical system (MEMS) transducer chip scale package comprising:
- providing a front side pre-fabricated semiconductor die wafer comprising a plurality of individual die that each comprise at least a MEMS transducer;
- and
- back etching the semiconductor die wafer, wherein the back etching comprises:
- at the back side of the semiconductor die wafer:
- etching an acoustic die channel through each respective die of the plurality of die and etching a die back volume into each respective die of the plurality of die.
-6. (canceled)
-12. (canceled)
A method as claimed in claim 10, wherein step C is performed, followed by performing steps A and D simultaneously, and wherein:
- in step C the third depth of the cap back volume determines a difference in depth of the cap back volume and the acoustic cap channel, and the first cross-section of the cap back volume is at least equal or larger than the second cross-section of the cap back volume;
- and
- in step A the first depth of the acoustic cap channel corresponds with the third cross-section of the acoustic die channel, and the first cross-section of the acoustic cap channel is such that the acoustic cap channel extends to a side of the wafer cap;
- and
- in step D the fourth depth of the cap back volume is the same as the first depth of the acoustic cap channel, and the second cross-section of the cap back volume is at least equal or larger than the third cross-section of the die back volume.
(canceled)
-29. (canceled)
Dependencies are inferred from the claim text.